Ultra‐Steep‐Slope High‐Gain MoS 2 Transistors with Atomic Threshold‐Switching Gate

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
Online-Ressource
Language
Englisch

Bibliographic citation
Ultra‐Steep‐Slope High‐Gain MoS 2 Transistors with Atomic Threshold‐Switching Gate ; day:17 ; month:01 ; year:2022 ; extent:6
Advanced science ; (17.01.2022) (gesamt 6)

Creator
Lin, Jun
Chen, Xiaozhang
Duan, Xinpei
Yu, Zhiming
Niu, Wencheng
Zhang, Mingliang
Liu, Chang
Li, Guoli
Liu, Yuan
Liu, Xingqiang
Zhou, Peng
Liao, Lei

DOI
10.1002/advs.202104439
URN
urn:nbn:de:101:1-2022011814070072605290
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
15.08.2025, 7:35 AM CEST

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Associated

  • Lin, Jun
  • Chen, Xiaozhang
  • Duan, Xinpei
  • Yu, Zhiming
  • Niu, Wencheng
  • Zhang, Mingliang
  • Liu, Chang
  • Li, Guoli
  • Liu, Yuan
  • Liu, Xingqiang
  • Zhou, Peng
  • Liao, Lei

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