Ultra‐Steep‐Slope High‐Gain MoS 2 Transistors with Atomic Threshold‐Switching Gate
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Bibliographic citation
-
Ultra‐Steep‐Slope High‐Gain MoS 2 Transistors with Atomic Threshold‐Switching Gate ; day:17 ; month:01 ; year:2022 ; extent:6
Advanced science ; (17.01.2022) (gesamt 6)
- Creator
-
Lin, Jun
Chen, Xiaozhang
Duan, Xinpei
Yu, Zhiming
Niu, Wencheng
Zhang, Mingliang
Liu, Chang
Li, Guoli
Liu, Yuan
Liu, Xingqiang
Zhou, Peng
Liao, Lei
- DOI
-
10.1002/advs.202104439
- URN
-
urn:nbn:de:101:1-2022011814070072605290
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:35 AM CEST
Data provider
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Lin, Jun
- Chen, Xiaozhang
- Duan, Xinpei
- Yu, Zhiming
- Niu, Wencheng
- Zhang, Mingliang
- Liu, Chang
- Li, Guoli
- Liu, Yuan
- Liu, Xingqiang
- Zhou, Peng
- Liao, Lei