High-field modulated ion-selective field-effect-transistor (FET) sensors with sensitivity higher than the ideal Nernst sensitivity
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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2045-2322
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Anmerkungen
-
online resource.
- Erschienen in
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High-field modulated ion-selective field-effect-transistor (FET) sensors with sensitivity higher than the ideal Nernst sensitivity ; volume:8 ; number:1 ; day:29 ; month:5 ; year:2018 ; pages:1-11 ; date:12.2018
Scientific reports ; 8, Heft 1 (29.5.2018), 1-11, 12.2018
- Klassifikation
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Biowissenschaften, Biologie
- Urheber
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Chen, Yi-Ting
- Beteiligte Personen und Organisationen
-
Sarangadharan, Indu
Sukesan, Revathi
Hseih, Ching-Yen
Lee, Geng-Yen
Chyi, Jen-Inn
Wang, Yu-Lin
SpringerLink (Online service)
- DOI
-
10.1038/s41598-018-26792-9
- URN
-
urn:nbn:de:101:1-2018080322073369297788
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:20 MESZ
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Beteiligte
- Chen, Yi-Ting
- Sarangadharan, Indu
- Sukesan, Revathi
- Hseih, Ching-Yen
- Lee, Geng-Yen
- Chyi, Jen-Inn
- Wang, Yu-Lin
- SpringerLink (Online service)
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