High-field modulated ion-selective field-effect-transistor (FET) sensors with sensitivity higher than the ideal Nernst sensitivity

Location
Deutsche Nationalbibliothek Frankfurt am Main
ISSN
2045-2322
Extent
Online-Ressource
Language
Englisch
Notes
online resource.

Bibliographic citation
High-field modulated ion-selective field-effect-transistor (FET) sensors with sensitivity higher than the ideal Nernst sensitivity ; volume:8 ; number:1 ; day:29 ; month:5 ; year:2018 ; pages:1-11 ; date:12.2018
Scientific reports ; 8, Heft 1 (29.5.2018), 1-11, 12.2018

Classification
Biowissenschaften, Biologie

Creator
Chen, Yi-Ting
Contributor
Sarangadharan, Indu
Sukesan, Revathi
Hseih, Ching-Yen
Lee, Geng-Yen
Chyi, Jen-Inn
Wang, Yu-Lin
SpringerLink (Online service)

DOI
10.1038/s41598-018-26792-9
URN
urn:nbn:de:101:1-2018080322073369297788
Rights
Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
16.08.20252025, 3:55 PM CEST

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Associated

  • Chen, Yi-Ting
  • Sarangadharan, Indu
  • Sukesan, Revathi
  • Hseih, Ching-Yen
  • Lee, Geng-Yen
  • Chyi, Jen-Inn
  • Wang, Yu-Lin
  • SpringerLink (Online service)

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