Couplings of Polarization with Interfacial Deep Trap and Schottky Interface Controlled Ferroelectric Memristive Switching
Abstract: Memristors with excellent scalability have the potential to revolutionize not only the field of information storage but also neuromorphic computing. Conventional metal oxides are widely used as resistive switching materials in memristors. Interface‐type memristors based on ferroelectric materials are emerging as alternatives in the development of high‐performance memory devices. A clear understanding of the switching mechanisms in this type of memristors, however, is still in its early stages. By comparing the bipolar switching in different systems, it is found that the switchable diode effect in ferroelectric memristors is controlled by polarization modulated Schottky barrier height and polarization coupled interfacial deep states trapping/detrapping. Using semiconductor theories with consideration of polarization effects, a phenomenological theory is developed to explain the current–voltage behavior at the metal/ferroelectric interface. These findings reveal the critical role of the interaction among polarization charges, interfacial defects, and Schottky interface in controlling ferroelectric resistive switching and offer the guidance to design ferroelectric memristors with enhanced performance.
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Couplings of Polarization with Interfacial Deep Trap and Schottky Interface Controlled Ferroelectric Memristive Switching ; volume:30 ; number:43 ; year:2020 ; extent:9
Advanced functional materials ; 30, Heft 43 (2020) (gesamt 9)
- Urheber
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Chen, Aiping
Zhang, Wenrui
Dedon, Liv R.
Chen, Di
Khatkhatay, Fauzia
MacManus‐Driscoll, Judith L.
Wang, Haiyan
Yarotski, Dmitry
Chen, Jun
Gao, Xingsun
Martin, Lane W.
Roelofs, Andreas
Jia, Quanxi
- DOI
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10.1002/adfm.202000664
- URN
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urn:nbn:de:101:1-2022060907235428149822
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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15.08.2025, 07:34 MESZ
Datenpartner
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Beteiligte
- Chen, Aiping
- Zhang, Wenrui
- Dedon, Liv R.
- Chen, Di
- Khatkhatay, Fauzia
- MacManus‐Driscoll, Judith L.
- Wang, Haiyan
- Yarotski, Dmitry
- Chen, Jun
- Gao, Xingsun
- Martin, Lane W.
- Roelofs, Andreas
- Jia, Quanxi
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