Two‐terminal direct wafer‐bonded GaInP/AlGaAs//Si triple‐junction solar cell with AM1.5g efficiency of 34.1%

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Abstract: The terrestrial photovoltaic market is dominated by single-junction silicon solar cell technology. However, there is a fundamental efficiency limit at 29.4%. This is overcome by multijunction devices. Recently, a GaInP/GaAs//Si wafer-bonded triple-junction two-terminal device is presented with a 33.3% (AM1.5g) efficiency. Herein, it is analyzed how this device is improved to reach a conversion efficiency of 34.1%. By improving the current matching, an efficiency of 35% (two terminals, AM1.5g) is expected

Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Notes: Solar RRL. - 4, 9 (2020) , 2000210, ISSN: 2367-198X

Classification: Elektrotechnik, Elektronik

Event: Veröffentlichung

(where): Freiburg

(who): Universität

(when): 2023

Creator: Lackner, David
Höhn, Oliver
Müller, Ralph
Beutel, Paul
Schygulla, Patrick
Hauser, Hubert
Predan, Felix
Siefer, Gerald
Schachtner, Michael
Schön, Jonas
Benick, Jan
Hermle, Martin
Dimroth, Frank

Contributor: Fraunhofer-Institut für Solare Energiesysteme ISE

DOI: 10.1002/solr.202000210

URN: urn:nbn:de:bsz:25-freidok-2339200

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 14.08.2025, 10:50 AM CEST

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Associated

Lackner, David
Höhn, Oliver
Müller, Ralph
Beutel, Paul
Schygulla, Patrick
Hauser, Hubert
Predan, Felix
Siefer, Gerald
Schachtner, Michael
Schön, Jonas
Benick, Jan
Hermle, Martin
Dimroth, Frank
Fraunhofer-Institut für Solare Energiesysteme ISE
Universität

Time of origin

2023

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Two‐terminal direct wafer‐bonded GaInP/AlGaAs//Si triple‐junction solar cell with AM1.5g efficiency of 34.1%

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Other Objects (12)

Two‐Terminal Direct Wafer‐Bonded GaInP/AlGaAs//Si Triple‐Junction Solar Cell with AM1.5g Efficiency of 34.1%

Electrical and Structural Analysis of β ‐Ga 2 O 3/GaN Wafer‐Bonded Heterojunctions with a ZnO Interlayer

High‐Efficiency Flexible GaAs/InGaAs Dual‐Junction Solar Cells Fabricated by Metallic Nanoparticle‐Based Wafer Bonding

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Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions

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Entwicklung von GaInP/GaAs/Si-Mehrfachsolarzellen mittels Wafer-Bonding

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Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions

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Cubic AlGaN/GaN hetero-junction field-effect transistors : fabrication and characterisation

1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer

Two‐Terminal Direct Wafer‐Bonded GaInP/AlGaAs//Si Triple‐Junction Solar Cell with AM1.5g Efficiency of 34.1%

Electrical and Structural Analysis of β ‐Ga 2 O 3/GaN Wafer‐Bonded Heterojunctions with a ZnO Interlayer

High‐Efficiency Flexible GaAs/InGaAs Dual‐Junction Solar Cells Fabricated by Metallic Nanoparticle‐Based Wafer Bonding

Direct Growth of a GaInP/GaAs/Si Triple‐Junction Solar Cell with 22.3% AM1.5g Efficiency

Entwicklung von GaInP/GaAs/Si-Mehrfachsolarzellen mittels Wafer-Bonding

Investigation of GaInAs strain reducing layer combined with InAs quantum dots embedded in Ga(In)As subcell of triple junction GaInP/Ga(In)As/Ge solar cell

Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions

Performance assessment of a triple-junction solar cell with 1.0 eV GaAsBi absorber

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1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer

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