Extended Defects in SiC: Selective Etching and Raman Study

Location
Deutsche Nationalbibliothek Frankfurt am Main
ISSN
1543-186X
Extent
Online-Ressource
Language
Englisch
Notes
online resource.

Bibliographic citation
Extended Defects in SiC: Selective Etching and Raman Study ; day:8 ; month:2 ; year:2023 ; pages:1-8
Journal of electronic materials ; (8.2.2023), 1-8

Creator
Weyher, J. L.
Tiberj, A.
Nowak, G.
Culbertson, J. C.
Freitas, J. A.
Contributor
SpringerLink (Online service)

DOI
10.1007/s11664-023-10272-6
URN
urn:nbn:de:101:1-2023041221210260854778
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
14.08.2025, 10:52 AM CEST

Data provider

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Associated

  • Weyher, J. L.
  • Tiberj, A.
  • Nowak, G.
  • Culbertson, J. C.
  • Freitas, J. A.
  • SpringerLink (Online service)

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