- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
-
1543-186X
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Anmerkungen
-
online resource.
- Erschienen in
-
Extended Defects in SiC: Selective Etching and Raman Study ; day:8 ; month:2 ; year:2023 ; pages:1-8
Journal of electronic materials ; (8.2.2023), 1-8
- Urheber
-
Weyher, J. L.
Tiberj, A.
Nowak, G.
Culbertson, J. C.
Freitas, J. A.
- Beteiligte Personen und Organisationen
-
SpringerLink (Online service)
- DOI
-
10.1007/s11664-023-10272-6
- URN
-
urn:nbn:de:101:1-2023041221210260854778
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
14.08.2025, 10:52 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
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Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Weyher, J. L.
- Tiberj, A.
- Nowak, G.
- Culbertson, J. C.
- Freitas, J. A.
- SpringerLink (Online service)
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