ULTRARAM: A Low‐Energy, High‐Endurance, Compound‐Semiconductor Memory on Silicon
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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ULTRARAM: A Low‐Energy, High‐Endurance, Compound‐Semiconductor Memory on Silicon ; day:05 ; month:01 ; year:2022 ; extent:9
Advanced electronic materials ; (05.01.2022) (gesamt 9)
- Urheber
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Hodgson, Peter D.
Lane, Dominic
Carrington, Peter J.
Delli, Evangelia
Beanland, Richard
Hayne, Manus
- DOI
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10.1002/aelm.202101103
- URN
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urn:nbn:de:101:1-2022010614121219003390
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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15.08.2025, 07:40 MESZ
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Beteiligte
- Hodgson, Peter D.
- Lane, Dominic
- Carrington, Peter J.
- Delli, Evangelia
- Beanland, Richard
- Hayne, Manus
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