Reliability Aspects of 28 nm BEOL‐Integrated Resistive Switching Random Access Memory

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Bibliographic citation: In: 10.1002/pssa.202300401

Classification: Elektrotechnik, Elektronik

Event: Veröffentlichung

(where): Aachen

(who): Universitätsbibliothek der RWTH Aachen

(when): 2023

Creator: Wiefels, Stefan
Kopperberg, Nils
Hofmann, Karl
Otterstedt, Jan
Wouters, Dirk J.
Waser, Rainer
Menzel, Stephan

DOI: 10.18154/RWTH-2023-10855

URN: urn:nbn:de:101:1-2023112200390249069637

Rights: Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:37 AM CEST

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Associated

Wiefels, Stefan
Kopperberg, Nils
Hofmann, Karl
Otterstedt, Jan
Wouters, Dirk J.
Waser, Rainer
Menzel, Stephan
Universitätsbibliothek der RWTH Aachen

Time of origin

2023

Other Objects (12)

Reliability Aspects of 28 nm BEOL‐Integrated Resistive Switching Random Access Memory

Critical Analysis of Thermodiffusion‐Induced Unipolar Resistive Switching in a Metal‐Oxide‐Metal Memristive Device

In‐Memory Binary Vector–Matrix Multiplication Based on Complementary Resistive Switches

Critical Analysis of Thermodiffusion‐Induced Unipolar Resistive Switching in a Metal‐Oxide‐Metal Memristive Device

In-Memory Binary Vector–Matrix Multiplication Based on Complementary Resistive Switches

Endurance of 2 mbit based beol integrated reram

Strategies to Control the Relaxation Kinetics of Ag‐Based Diffusive Memristors and Implications for Device Operation

Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulations

Hochschulschrift

Die Güterbeförderung der Deutschen Reichsbahn und ihre Planung : (T. 1. 2)

Aufsatz

102-103 [Rezension] Prozeß- und Strafrecht

Personenakten

Hofmann, Karl

Reliability Aspects of 28 nm BEOL‐Integrated Resistive Switching Random Access Memory

Critical Analysis of Thermodiffusion‐Induced Unipolar Resistive Switching in a Metal‐Oxide‐Metal Memristive Device

In‐Memory Binary Vector–Matrix Multiplication Based on Complementary Resistive Switches

Critical Analysis of Thermodiffusion‐Induced Unipolar Resistive Switching in a Metal‐Oxide‐Metal Memristive Device

In-Memory Binary Vector–Matrix Multiplication Based on Complementary Resistive Switches

Endurance of 2 mbit based beol integrated reram

Strategies to Control the Relaxation Kinetics of Ag‐Based Diffusive Memristors and Implications for Device Operation

Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulations

Hochschulschrift

Die Güterbeförderung der Deutschen Reichsbahn und ihre Planung : (T. 1. 2)

Aufsatz

102-103 [Rezension] Prozeß- und Strafrecht

Personenakten

Hofmann, Karl

Reliability Aspects of 28 nm BEOL‐Integrated Resistive Switching Random Access Memory

Critical Analysis of Thermodiffusion‐Induced Unipolar Resistive Switching in a Metal‐Oxide‐Metal Memristive Device

In‐Memory Binary Vector–Matrix Multiplication Based on Complementary Resistive Switches

Critical Analysis of Thermodiffusion‐Induced Unipolar Resistive Switching in a Metal‐Oxide‐Metal Memristive Device

In-Memory Binary Vector–Matrix Multiplication Based on Complementary Resistive Switches

Endurance of 2 mbit based beol integrated reram

Strategies to Control the Relaxation Kinetics of Ag‐Based Diffusive Memristors and Implications for Device Operation

Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulations

Hochschulschrift

Die Güterbeförderung der Deutschen Reichsbahn und ihre Planung : (T. 1. 2)

Aufsatz

102-103 [Rezension] Prozeß- und Strafrecht

Personenakten

Hofmann, Karl

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Reliability Aspects of 28 nm BEOL‐Integrated Resistive Switching Random Access Memory

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Other Objects (12)

Reliability Aspects of 28 nm BEOL‐Integrated Resistive Switching Random Access Memory

Critical Analysis of Thermodiffusion‐Induced Unipolar Resistive Switching in a Metal‐Oxide‐Metal Memristive Device

In‐Memory Binary Vector–Matrix Multiplication Based on Complementary Resistive Switches

In‐Memory Binary Vector–Matrix Multiplication Based on Complementary Resistive Switches

Critical Analysis of Thermodiffusion‐Induced Unipolar Resistive Switching in a Metal‐Oxide‐Metal Memristive Device

In-Memory Binary Vector–Matrix Multiplication Based on Complementary Resistive Switches

Endurance of 2 mbit based beol integrated reram

Strategies to Control the Relaxation Kinetics of Ag‐Based Diffusive Memristors and Implications for Device Operation

Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulations

Die Güterbeförderung der Deutschen Reichsbahn und ihre Planung : (T. 1. 2)

102-103 [Rezension] Prozeß- und Strafrecht

Hofmann, Karl

Reliability Aspects of 28 nm BEOL‐Integrated Resistive Switching Random Access Memory

Critical Analysis of Thermodiffusion‐Induced Unipolar Resistive Switching in a Metal‐Oxide‐Metal Memristive Device

In‐Memory Binary Vector–Matrix Multiplication Based on Complementary Resistive Switches

In‐Memory Binary Vector–Matrix Multiplication Based on Complementary Resistive Switches

Critical Analysis of Thermodiffusion‐Induced Unipolar Resistive Switching in a Metal‐Oxide‐Metal Memristive Device

In-Memory Binary Vector–Matrix Multiplication Based on Complementary Resistive Switches

Endurance of 2 mbit based beol integrated reram

Strategies to Control the Relaxation Kinetics of Ag‐Based Diffusive Memristors and Implications for Device Operation

Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulations

Die Güterbeförderung der Deutschen Reichsbahn und ihre Planung : (T. 1. 2)

102-103 [Rezension] Prozeß- und Strafrecht

Hofmann, Karl

Reliability Aspects of 28 nm BEOL‐Integrated Resistive Switching Random Access Memory

Critical Analysis of Thermodiffusion‐Induced Unipolar Resistive Switching in a Metal‐Oxide‐Metal Memristive Device

In‐Memory Binary Vector–Matrix Multiplication Based on Complementary Resistive Switches

In‐Memory Binary Vector–Matrix Multiplication Based on Complementary Resistive Switches

Critical Analysis of Thermodiffusion‐Induced Unipolar Resistive Switching in a Metal‐Oxide‐Metal Memristive Device

In-Memory Binary Vector–Matrix Multiplication Based on Complementary Resistive Switches

Endurance of 2 mbit based beol integrated reram

Strategies to Control the Relaxation Kinetics of Ag‐Based Diffusive Memristors and Implications for Device Operation

Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulations

Die Güterbeförderung der Deutschen Reichsbahn und ihre Planung : (T. 1. 2)

102-103 [Rezension] Prozeß- und Strafrecht

Hofmann, Karl

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