Diffusion Analysis of Charge Carriers in InGaN/GaN Heterostructures by Microphotoluminescence
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Diffusion Analysis of Charge Carriers in InGaN/GaN Heterostructures by Microphotoluminescence ; day:30 ; month:03 ; year:2023 ; extent:9
Physica status solidi / B. B, Basic solid state physics ; (30.03.2023) (gesamt 9)
- Creator
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Becht, Conny
Schwarz, Ulrich T.
Binder, Michael
Galler, Bastian
- DOI
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10.1002/pssb.202200565
- URN
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urn:nbn:de:101:1-2023033115093764466229
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 10:52 AM CEST
Data provider
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Becht, Conny
- Schwarz, Ulrich T.
- Binder, Michael
- Galler, Bastian
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Subpicosecond carrier transport in GaAs surface-space-charge fields
Charge carrier dynamics in InGaN quantum wells : stimulated emission depletion and lateral charge carrier motion
Charge carrier dynamics in InGaN quantum wells: stimulated emission depletion and lateral charge carrier motion
Temperature‐Dependent Charge Carrier Diffusion in (000 1 ¯) Direction of GaN Determined by Luminescence Evaluation of Buried InGaN Quantum Wells
Frequency dependent CV measurements of GaAs/AlGaAs heterostructures
Charge-transfer in B-site-depleted NdGaO3/SrTiO3 heterostructures
Local charge carrier diffusion and recombination in InGaN quantum wells
Au‐Free Ohmic Contacts and Their Impact on Sub‐Contact Charge Carrier Concentration in AlGaN/GaN Heterostructures
Au‐free ohmic contacts and their impact on sub‐contact charge carrier concentration in AlGaN/GaN heterostructures
Spin injection in MnGa/ GaN heterostructures
The Influence of Internal Interfaces on Charge‐Carrier Diffusion in Semiconductor Heterostructures
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Subpicosecond carrier transport in GaAs surface-space-charge fields
Charge carrier dynamics in InGaN quantum wells : stimulated emission depletion and lateral charge carrier motion
Charge carrier dynamics in InGaN quantum wells: stimulated emission depletion and lateral charge carrier motion
Temperature‐Dependent Charge Carrier Diffusion in (000 1 ¯) Direction of GaN Determined by Luminescence Evaluation of Buried InGaN Quantum Wells
Frequency dependent CV measurements of GaAs/AlGaAs heterostructures