Hochschulschrift
Local charge carrier diffusion and recombination in InGaN quantum wells : = Lokale Ladungsträgerdiffusion und -rekombination in InGaN Quantentrögen
- Alternative title
-
Lokale Ladungsträgerdiffusion und -rekombination in InGaN Quantentrögen
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Notes
-
Fraunhofer-Institut für angewandte Festkörperphysik, Reihe "Science for Systems" , Bd. 13
Albert-Ludwigs-Universität Freiburg, Dissertation, 2013
- Classification
-
Physik
- Keyword
-
Photolumineszenzspektroskopie
Quantenwell
Online-Ressource
- Event
-
Veröffentlichung
- (where)
-
Freiburg
- (who)
-
Universität
- (when)
-
2013
- Creator
- Contributor
- URN
-
urn:nbn:de:bsz:25-opus-92217
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
14.08.2025, 10:45 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Object type
- Hochschulschrift
Associated
- Danhof, Julia
- Schwarz, Ulrich Theodor
- Universität
Time of origin
- 2013
Other Objects (12)
InGaN nanowires on silicon
Local charge carrier diffusion and recombination in InGaN quantum wells
Regular red-green-blue InGaN quantum wells with In content up to 40% grown on InGaN nanopyramids
Optimization of (In)GaN Heterostructures for Sensing Applications
Structural, Optical, and Electrical Characterization of 643 nm Red InGaN Multiquantum Wells Grown on Strain‐Relaxed InGaN Templates
Optical analysis of InN and InGaN nanostructures
Growth and characterization of cubic InGaN and InGaN/GaN quantum wells
Growth and characterization of cubic InGaN and InGaN/GaN quantum wells
Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods
Etching-free pixel definition in InGaN green micro-LEDs
Optical Characterization of InGaN Quantum Structures at the Nanoscale
Research Toward a Heterogeneously Integrated InGaN Laser on Silicon
InGaN nanowires on silicon
Local charge carrier diffusion and recombination in InGaN quantum wells
Regular red-green-blue InGaN quantum wells with In content up to 40% grown on InGaN nanopyramids
Optimization of (In)GaN Heterostructures for Sensing Applications
Structural, Optical, and Electrical Characterization of 643 nm Red InGaN Multiquantum Wells Grown on Strain‐Relaxed InGaN Templates
Optical analysis of InN and InGaN nanostructures
Growth and characterization of cubic InGaN and InGaN/GaN quantum wells
Growth and characterization of cubic InGaN and InGaN/GaN quantum wells
Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods
Etching-free pixel definition in InGaN green micro-LEDs
Optical Characterization of InGaN Quantum Structures at the Nanoscale
Research Toward a Heterogeneously Integrated InGaN Laser on Silicon
InGaN nanowires on silicon
Local charge carrier diffusion and recombination in InGaN quantum wells
Regular red-green-blue InGaN quantum wells with In content up to 40% grown on InGaN nanopyramids
Optimization of (In)GaN Heterostructures for Sensing Applications
Structural, Optical, and Electrical Characterization of 643 nm Red InGaN Multiquantum Wells Grown on Strain‐Relaxed InGaN Templates
Optical analysis of InN and InGaN nanostructures
Growth and characterization of cubic InGaN and InGaN/GaN quantum wells
Growth and characterization of cubic InGaN and InGaN/GaN quantum wells
Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods
Etching-free pixel definition in InGaN green micro-LEDs
Optical Characterization of InGaN Quantum Structures at the Nanoscale