Defect‐Engineered Magnetic Field Dependent Optoelectronics of Vanadium Doped Tungsten Diselenide Monolayers
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Erschienen in
-
Defect‐Engineered Magnetic Field Dependent Optoelectronics of Vanadium Doped Tungsten Diselenide Monolayers ; day:15 ; month:06 ; year:2022 ; extent:8
Advanced optical materials ; (15.06.2022) (gesamt 8)
- Urheber
-
Nisi, Katharina
Kiemle, Jonas
Powalla, Lukas
Scavuzzo, Alessio
Nguyen, Tuan Dung
Taniguchi, Takashi
Watanabe, Kenji
Duong, Dinh Loc
Burghard, Marko
Holleitner, Alexander W.
Kastl, Christoph
- DOI
-
10.1002/adom.202102711
- URN
-
urn:nbn:de:101:1-2022061515250914258112
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:38 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Nisi, Katharina
- Kiemle, Jonas
- Powalla, Lukas
- Scavuzzo, Alessio
- Nguyen, Tuan Dung
- Taniguchi, Takashi
- Watanabe, Kenji
- Duong, Dinh Loc
- Burghard, Marko
- Holleitner, Alexander W.
- Kastl, Christoph
Ähnliche Objekte (12)
High‐Speed Electroluminescence Modulation in Monolayer WS 2
Ultrafast Exciton and Trion Dynamics in High‐Quality Encapsulated MoS 2 Monolayers
A ballistic graphene superconducting microwave circuit
MoS2 photodetectors integrated with photonic circuits
Coulomb-bound four- and five-particle intervalley states in an atomically-thin semiconductor
Orbitally Controlled Quantum Hall States in Decoupled Two‐Bilayer Graphene Sheets
From h ‐BN to Graphene: Characterizations of Hybrid Carbon‐Doped h ‐BN for Applications in Electronic and Optoelectronic Devices
Insulating State in Low‐Disorder Graphene Nanoribbons
Characterization of the second- and third-harmonic optical susceptibilities of atomically thin tungsten diselenide
Electroluminescence from multi-particle exciton complexes in transition metal dichalcogenide semiconductors
Gate‐Controlled Magnetotransport and Electrostatic Modulation of Magnetism in 2D Magnetic Semiconductor CrPS 4
Light from van der Waals quantum tunneling devices
High‐Speed Electroluminescence Modulation in Monolayer WS 2
Ultrafast Exciton and Trion Dynamics in High‐Quality Encapsulated MoS 2 Monolayers
A ballistic graphene superconducting microwave circuit
MoS2 photodetectors integrated with photonic circuits
Coulomb-bound four- and five-particle intervalley states in an atomically-thin semiconductor
Orbitally Controlled Quantum Hall States in Decoupled Two‐Bilayer Graphene Sheets
From h ‐BN to Graphene: Characterizations of Hybrid Carbon‐Doped h ‐BN for Applications in Electronic and Optoelectronic Devices
Insulating State in Low‐Disorder Graphene Nanoribbons
Characterization of the second- and third-harmonic optical susceptibilities of atomically thin tungsten diselenide
Electroluminescence from multi-particle exciton complexes in transition metal dichalcogenide semiconductors
Gate‐Controlled Magnetotransport and Electrostatic Modulation of Magnetism in 2D Magnetic Semiconductor CrPS 4
Light from van der Waals quantum tunneling devices
High‐Speed Electroluminescence Modulation in Monolayer WS 2
Ultrafast Exciton and Trion Dynamics in High‐Quality Encapsulated MoS 2 Monolayers
A ballistic graphene superconducting microwave circuit
MoS2 photodetectors integrated with photonic circuits
Coulomb-bound four- and five-particle intervalley states in an atomically-thin semiconductor
Orbitally Controlled Quantum Hall States in Decoupled Two‐Bilayer Graphene Sheets
From h ‐BN to Graphene: Characterizations of Hybrid Carbon‐Doped h ‐BN for Applications in Electronic and Optoelectronic Devices
Insulating State in Low‐Disorder Graphene Nanoribbons
Characterization of the second- and third-harmonic optical susceptibilities of atomically thin tungsten diselenide
Electroluminescence from multi-particle exciton complexes in transition metal dichalcogenide semiconductors
Gate‐Controlled Magnetotransport and Electrostatic Modulation of Magnetism in 2D Magnetic Semiconductor CrPS 4