Crystallization behavior of ion beam sputtered HfO2 thin films and its effect on the laser-induced damage threshold

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Location: Deutsche Nationalbibliothek Frankfurt am Main

ISSN: 1990-2573

Extent: Online-Ressource

Language: Englisch

Notes: online resource.

Bibliographic citation: Crystallization behavior of ion beam sputtered HfO2 thin films and its effect on the laser-induced damage threshold ; volume:17 ; number:1 ; day:6 ; month:3 ; year:2021 ; pages:1-8 ; date:12.2021
Journal of the European Optical Society / Rapid publications. Rapid publications / European Optical Society ; 17, Heft 1 (6.3.2021), 1-8, 12.2021

Creator: Balogh-Michels, Zoltán
Stevanovic, Igor
Borzi, Aurelio
Bächli, Andreas
Schachtler, Daniel
Gischkat, Thomas
Neels, Antonia
Stuck, Alexander
Botha, Roelene

Contributor: SpringerLink (Online service)

DOI: 10.1186/s41476-021-00147-w

URN: urn:nbn:de:101:1-2021041920225756365992

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 14.08.2025, 10:45 AM CEST

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Associated

Balogh-Michels, Zoltán
Stevanovic, Igor
Borzi, Aurelio
Bächli, Andreas
Schachtler, Daniel
Gischkat, Thomas
Neels, Antonia
Stuck, Alexander
Botha, Roelene
SpringerLink (Online service)

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Crystallization behavior of ion beam sputtered HfO2 thin films and its effect on the laser-induced damage threshold

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Other Objects (12)

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Assessment of Back‐End‐of‐Line Compatibility of Sputtered HfO 2 ‐Based Ferroelectrics

Percolated Si:SiO2 Nanocomposite: Oven- vs. Laser-Induced Crystallization of SiOx Thin Films

Thermal stability of magnetron sputtered W/HfO₂ and Ir/HfO₂ thin films used as selective emitter in thermophotovoltaic applications

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Percolated Si:SiO2 Nanocomposite: Oven- vs. Laser-Induced Crystallization of SiOx Thin Films

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Assessment of Back‐End‐of‐Line Compatibility of Sputtered HfO 2 ‐Based Ferroelectrics

Percolated Si:SiO2 Nanocomposite: Oven- vs. Laser-Induced Crystallization of SiOx Thin Films

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