On the phenomenon of large photoluminescence red shift in GaN nanoparticles

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Location: Deutsche Nationalbibliothek Frankfurt am Main

ISSN: 1556-276X

Extent: Online-Ressource

Language: Englisch

Notes: online resource.

Bibliographic citation: On the phenomenon of large photoluminescence red shift in GaN nanoparticles ; volume:8 ; number:1 ; day:31 ; month:7 ; year:2013 ; pages:1-6 ; date:12.2013
Nanoscale research letters ; 8, Heft 1 (31.7.2013), 1-6, 12.2013

Creator: Slimane, Ahmed Ben
Najar, Adel
Elafandy, Rami
San-Román-Alerigi, Damián P.
Anjum, Dalaver
Ng, Tien Khee
Ooi, Boon S.

Contributor: SpringerLink (Online service)

DOI: 10.1186/1556-276X-8-342

URN: urn:nbn:de:101:1-2021082820590386262586

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:28 AM CEST

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Associated

Slimane, Ahmed Ben
Najar, Adel
Elafandy, Rami
San-Román-Alerigi, Damián P.
Anjum, Dalaver
Ng, Tien Khee
Ooi, Boon S.
SpringerLink (Online service)

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Photoluminescence from Be‐Doped GaN Grown by Metal‐Organic Chemical Vapor Deposition

Stable and Reversible Photoluminescence from GaN Nanowires in Solution Tuning by Ionic Concentration

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Stable and Reversible Photoluminescence from GaN Nanowires in Solution Tuning by Ionic Concentration

Optimization of the Epitaxial Growth of Undoped GaN Waveguides in GaN-Based Laser Diodes Evaluated by Photoluminescence

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On the phenomenon of large photoluminescence red shift in GaN nanoparticles

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Other Objects (12)

Photoluminescence from Vacancy‐Containing Defects in GaN

Photoluminescence from Defects in Be‐Doped GaN

Photoluminescence from GaN Implanted with Be and F

Photoluminescence related to transition metal and carbon defects in GaN

Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods

Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN

Photoluminescence line shape analysis of highly n‐type doped zincblende GaN

In-situ photoluminescence measurements during MOVPE growth of GaN and InGaN MQW structures

Photoluminescence from Be‐Doped GaN Grown by Metal‐Organic Chemical Vapor Deposition

Stable and Reversible Photoluminescence from GaN Nanowires in Solution Tuning by Ionic Concentration

Optimization of the Epitaxial Growth of Undoped GaN Waveguides in GaN-Based Laser Diodes Evaluated by Photoluminescence

1.5 μm photoluminescence and upconversion photoluminescence in GeGaAsS:Er chalcogenide glass

Photoluminescence from Vacancy‐Containing Defects in GaN

Photoluminescence from Defects in Be‐Doped GaN

Photoluminescence from GaN Implanted with Be and F

Photoluminescence related to transition metal and carbon defects in GaN

Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods

Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN

Photoluminescence line shape analysis of highly n‐type doped zincblende GaN

In-situ photoluminescence measurements during MOVPE growth of GaN and InGaN MQW structures

Photoluminescence from Be‐Doped GaN Grown by Metal‐Organic Chemical Vapor Deposition

Stable and Reversible Photoluminescence from GaN Nanowires in Solution Tuning by Ionic Concentration

Optimization of the Epitaxial Growth of Undoped GaN Waveguides in GaN-Based Laser Diodes Evaluated by Photoluminescence

1.5 μm photoluminescence and upconversion photoluminescence in GeGaAsS:Er chalcogenide glass

Photoluminescence from Vacancy‐Containing Defects in GaN

Photoluminescence from Defects in Be‐Doped GaN

Photoluminescence from GaN Implanted with Be and F

Photoluminescence related to transition metal and carbon defects in GaN

Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods

Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN

Photoluminescence line shape analysis of highly n‐type doped zincblende GaN

In-situ photoluminescence measurements during MOVPE growth of GaN and InGaN MQW structures

Photoluminescence from Be‐Doped GaN Grown by Metal‐Organic Chemical Vapor Deposition

Stable and Reversible Photoluminescence from GaN Nanowires in Solution Tuning by Ionic Concentration

Optimization of the Epitaxial Growth of Undoped GaN Waveguides in GaN-Based Laser Diodes Evaluated by Photoluminescence

1.5 μm photoluminescence and upconversion photoluminescence in GeGaAsS:Er chalcogenide glass

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