- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Bibliographic citation
-
Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN ; volume:257 ; number:4 ; year:2020 ; extent:5
Physica status solidi / B. B, Basic solid state physics ; 257, Heft 4 (2020) (gesamt 5)
- Creator
- DOI
-
10.1002/pssb.201900522
- URN
-
urn:nbn:de:101:1-2022062410291309060056
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:37 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Baron, Elias
- Goldhahn, Rüdiger
- Deppe, Michael
- As, Donat J.
- Feneberg, Martin
Other Objects (12)
Photoluminescence line shape analysis of highly n‐type doped zincblende GaN
EPR-induced charge transport in highly doped crystalline n-type silicon carbide
EPR-induced charge transport in highly doped crystalline n-type silicone carbide
Photoluminescence and Raman spectroscopy of doped nanomaterials
Pressure-sensitive liquid phase epitaxy of highly-doped n-type SiGe crystals for thermoelectric applications
Photoluminescence from Defects in Be‐Doped GaN
Temperature Promotes Photoluminescence in Lanthanide‐Doped 3D Ceramic Microarchitectures
Structural, optical, photoluminescence and magnetic investigation of doped and Co-doped ZnO nanoparticles
N-type H2-doped amorphous silicon layer for solar-cell application
Fabrication of n‐Type Doped V‐Shaped Structures on (100) Diamond
Dissolution of donor-vacancy clusters in heavily doped n-type germanium
Thermoelectric Properties of Hot-Pressed Bi-Doped n-Type Polycrystalline SnSe
Photoluminescence line shape analysis of highly n‐type doped zincblende GaN
EPR-induced charge transport in highly doped crystalline n-type silicon carbide
EPR-induced charge transport in highly doped crystalline n-type silicone carbide
Photoluminescence and Raman spectroscopy of doped nanomaterials
Pressure-sensitive liquid phase epitaxy of highly-doped n-type SiGe crystals for thermoelectric applications
Photoluminescence from Defects in Be‐Doped GaN
Temperature Promotes Photoluminescence in Lanthanide‐Doped 3D Ceramic Microarchitectures
Structural, optical, photoluminescence and magnetic investigation of doped and Co-doped ZnO nanoparticles
N-type H2-doped amorphous silicon layer for solar-cell application
Fabrication of n‐Type Doped V‐Shaped Structures on (100) Diamond
Dissolution of donor-vacancy clusters in heavily doped n-type germanium
Thermoelectric Properties of Hot-Pressed Bi-Doped n-Type Polycrystalline SnSe
Photoluminescence line shape analysis of highly n‐type doped zincblende GaN
EPR-induced charge transport in highly doped crystalline n-type silicon carbide
EPR-induced charge transport in highly doped crystalline n-type silicone carbide
Photoluminescence and Raman spectroscopy of doped nanomaterials
Pressure-sensitive liquid phase epitaxy of highly-doped n-type SiGe crystals for thermoelectric applications
Photoluminescence from Defects in Be‐Doped GaN
Temperature Promotes Photoluminescence in Lanthanide‐Doped 3D Ceramic Microarchitectures
Structural, optical, photoluminescence and magnetic investigation of doped and Co-doped ZnO nanoparticles
N-type H2-doped amorphous silicon layer for solar-cell application
Fabrication of n‐Type Doped V‐Shaped Structures on (100) Diamond
Dissolution of donor-vacancy clusters in heavily doped n-type germanium