Hochschulschrift
The source, drain engineering of nanoscale germanium-based MOS devices
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISBN
-
9783662496817
366249681X
- Dimensions
-
24 cm
- Extent
-
xiv, 59 Seiten
- Edition
-
[1st ed.]
- Language
-
Englisch
- Notes
-
Illustrationen
- Classification
-
Elektrotechnik, Elektronik
- Keyword
-
MOS-FET
Germanium
Nanometerbereich
Source
Drain
Kontaktwiderstand
Parasitäres Element
Schottky-Kontakt
- Event
-
Veröffentlichung
- (where)
-
Berlin, Heidelberg
- (who)
-
Springer
- (when)
-
[2016]
- Creator
-
Li, Zhiqiang
- Contributor
- Table of contents
- Rights
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Last update
-
11.06.2025, 2:16 PM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Object type
- Hochschulschrift
Associated
- Li, Zhiqiang
- Springer-Verlag GmbH
- Springer
Time of origin
- [2016]
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