Colossal Tunneling Electroresistance in Co‐Planar Polymer Ferroelectric Tunnel Junctions
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Bibliographic citation
-
Colossal Tunneling Electroresistance in Co‐Planar Polymer Ferroelectric Tunnel Junctions ; volume:6 ; number:2 ; year:2020 ; extent:7
Advanced electronic materials ; 6, Heft 2 (2020) (gesamt 7)
- Creator
-
Kumar, Manasvi
Georgiadou, Dimitra G.
Seitkhan, Akmaral
Loganathan, Kalaivanan
Yengel, Emre
Faber, Hendrik
Naphade, Dipti
Basu, Aniruddha
Anthopoulos, Thomas D.
Asadi, Kamal
- DOI
-
10.1002/aelm.201901091
- URN
-
urn:nbn:de:101:1-2022070212293821378712
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:25 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Kumar, Manasvi
- Georgiadou, Dimitra G.
- Seitkhan, Akmaral
- Loganathan, Kalaivanan
- Yengel, Emre
- Faber, Hendrik
- Naphade, Dipti
- Basu, Aniruddha
- Anthopoulos, Thomas D.
- Asadi, Kamal
Other Objects (12)
Ferroelectric tunnel junctions
Greatly enhanced tunneling electroresistance in ferroelectric tunnel junctions with a double barrier design
Inelastic Tunneling in Superconducting Junctions
Tunneling spectroscopy of magnetic tunnel junctions
Broad and colossal edge supercurrent in Dirac semimetal Cd3As2 Josephson junctions
Ferroelectric Tunnel Junctions based on Ferroelectric-Dielectric Hf₀.₅Zr₀.₅O₂/Al₂O₃ Capacitor Stacks
A Room‐Temperature Ferroelectric Resonant Tunneling Diode
Solution epitaxy of polarization-gradient ferroelectric oxide films with colossal photovoltaic current
Colossal Strain Tuning of Ferroelectric Transitions in KNbO 3 Thin Films
Retention Characteristics of Hf₀.₅Zr₀.₅O₂-based Ferroelectric Tunnel Junctions
Addendum: Solution epitaxy of polarization-gradient ferroelectric oxide films with colossal photovoltaic current
Magnetic tunneling junctions with the Heusler compound Co2Cr0.6Fe0.4Al
Ferroelectric tunnel junctions
Greatly enhanced tunneling electroresistance in ferroelectric tunnel junctions with a double barrier design
Inelastic Tunneling in Superconducting Junctions
Tunneling spectroscopy of magnetic tunnel junctions
Broad and colossal edge supercurrent in Dirac semimetal Cd3As2 Josephson junctions
Ferroelectric Tunnel Junctions based on Ferroelectric-Dielectric Hf₀.₅Zr₀.₅O₂/Al₂O₃ Capacitor Stacks
A Room‐Temperature Ferroelectric Resonant Tunneling Diode
Solution epitaxy of polarization-gradient ferroelectric oxide films with colossal photovoltaic current
Colossal Strain Tuning of Ferroelectric Transitions in KNbO 3 Thin Films
Retention Characteristics of Hf₀.₅Zr₀.₅O₂-based Ferroelectric Tunnel Junctions
Addendum: Solution epitaxy of polarization-gradient ferroelectric oxide films with colossal photovoltaic current
Magnetic tunneling junctions with the Heusler compound Co2Cr0.6Fe0.4Al
Ferroelectric tunnel junctions
Greatly enhanced tunneling electroresistance in ferroelectric tunnel junctions with a double barrier design
Inelastic Tunneling in Superconducting Junctions
Tunneling spectroscopy of magnetic tunnel junctions
Broad and colossal edge supercurrent in Dirac semimetal Cd3As2 Josephson junctions
Ferroelectric Tunnel Junctions based on Ferroelectric-Dielectric Hf₀.₅Zr₀.₅O₂/Al₂O₃ Capacitor Stacks
A Room‐Temperature Ferroelectric Resonant Tunneling Diode
Solution epitaxy of polarization-gradient ferroelectric oxide films with colossal photovoltaic current
Colossal Strain Tuning of Ferroelectric Transitions in KNbO 3 Thin Films
Retention Characteristics of Hf₀.₅Zr₀.₅O₂-based Ferroelectric Tunnel Junctions
Addendum: Solution epitaxy of polarization-gradient ferroelectric oxide films with colossal photovoltaic current