Ultrafast Opto‐Electronic and Thermal Tuning of Third‐Harmonic Generation in a Graphene Field Effect Transistor

Abstract: Graphene is a unique platform for tunable opto‐electronic applications thanks to its linear band dispersion, which allows electrical control of resonant light‐matter interactions. Tuning the nonlinear optical response of graphene is possible both electrically and in an all‐optical fashion, but each approach involves a trade‐off between speed and modulation depth. Here, lattice temperature, electron doping, and all‐optical tuning of third‐harmonic generation are combined in a hexagonal boron nitride‐encapsulated graphene opto‐electronic device and demonstrate up to 85% modulation depth along with gate‐tunable ultrafast dynamics. These results arise from the dynamic changes in the transient electronic temperature combined with Pauli blocking induced by the out‐of‐equilibrium chemical potential. The work provides a detailed description of the transient nonlinear optical and electronic response of graphene, which is crucial for the design of nanoscale and ultrafast optical modulators, detectors, and frequency converters.

Standort
Deutsche Nationalbibliothek Frankfurt am Main
Umfang
Online-Ressource
Sprache
Englisch

Erschienen in
Ultrafast Opto‐Electronic and Thermal Tuning of Third‐Harmonic Generation in a Graphene Field Effect Transistor ; day:18 ; month:06 ; year:2024 ; extent:9
Advanced science ; (18.06.2024) (gesamt 9)

Urheber
Ghaebi, Omid
Klimmer, Sebastian
Tornow, Nele
Buijssen, Niels
Taniguchi, Takashi
Watanabe, Kenji
Tomadin, Andrea
Rostami, Habib
Soavi, Giancarlo

DOI
10.1002/advs.202401840
URN
urn:nbn:de:101:1-2406191424315.222701048199
Rechteinformation
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Letzte Aktualisierung
14.08.2025, 10:46 MESZ

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