Exploring Multi‐Bit Logic In‐Memory with Memristive HfO 2 ‐Based Ferroelectric Tunnel Junctions (Adv. Electron. Mater. 3/2024)
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Exploring Multi‐Bit Logic In‐Memory with Memristive HfO 2 ‐Based Ferroelectric Tunnel Junctions (Adv. Electron. Mater. 3/2024) ; volume:10 ; number:3 ; year:2024 ; extent:1
Advanced electronic materials ; 10, Heft 3 (2024) (gesamt 1)
- Creator
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Kho, Wonwoo
Hwang, Hyunjoo
Ahn, Seung‐Eon
- DOI
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10.1002/aelm.202470010
- URN
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urn:nbn:de:101:1-2024030813272109851797
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 10:54 AM CEST
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Associated
- Kho, Wonwoo
- Hwang, Hyunjoo
- Ahn, Seung‐Eon
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