Molecular Beam Epitaxy Growth of GaN/InGaN Heterostructures under In‐Bilayer Stabilized Conditions
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Molecular Beam Epitaxy Growth of GaN/InGaN Heterostructures under In‐Bilayer Stabilized Conditions ; day:07 ; month:03 ; year:2024 ; extent:6
Physica status solidi / B. B, Basic solid state physics ; (07.03.2024) (gesamt 6)
- Urheber
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Malindretos, Joerg
Jaeckel, Hendrik
Hilbrunner, Constantin
Rizzi, Angela
- DOI
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10.1002/pssb.202400015
- URN
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urn:nbn:de:101:1-2024030813275892653273
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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14.08.2025, 11:04 MESZ
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Beteiligte
- Malindretos, Joerg
- Jaeckel, Hendrik
- Hilbrunner, Constantin
- Rizzi, Angela
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