Automatic Prediction of Metal–Oxide–Semiconductor Field‐Effect Transistor Threshold Voltage Using Machine Learning Algorithm
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Automatic Prediction of Metal–Oxide–Semiconductor Field‐Effect Transistor Threshold Voltage Using Machine Learning Algorithm ; day:20 ; month:12 ; year:2022 ; extent:6
Advanced intelligent systems ; (20.12.2022) (gesamt 6)
- Urheber
-
Choi, Seoyeon
Park, Dong Geun
Kim, Min Jung
Bang, Seain
Kim, Jungchun
Jin, Seunghee
Huh, Ki Seok
Kim, Donghyun
Mitard, Jerome
Han, Cheol E.
Lee, Jae Woo
- DOI
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10.1002/aisy.202200302
- URN
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urn:nbn:de:101:1-2022122114120328030686
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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15.08.2025, 07:29 MESZ
Datenpartner
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Beteiligte
- Choi, Seoyeon
- Park, Dong Geun
- Kim, Min Jung
- Bang, Seain
- Kim, Jungchun
- Jin, Seunghee
- Huh, Ki Seok
- Kim, Donghyun
- Mitard, Jerome
- Han, Cheol E.
- Lee, Jae Woo
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