Contactless, nondestructive determination of dopant profiles of localized boron-diffused regions in silicon wafers at room temperature
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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2045-2322
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Anmerkungen
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online resource.
- Erschienen in
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Contactless, nondestructive determination of dopant profiles of localized boron-diffused regions in silicon wafers at room temperature ; volume:9 ; number:1 ; day:18 ; month:7 ; year:2019 ; pages:1-8 ; date:12.2019
Scientific reports ; 9, Heft 1 (18.7.2019), 1-8, 12.2019
- Urheber
-
Nguyen, Hieu T.
Li, Zhuofeng
Han, Young-Joon
Basnet, Rabin
Tebyetekerwa, Mike
Truong, Thien N.
Wu, Huiting
Yan, Di
Macdonald, Daniel
- Beteiligte Personen und Organisationen
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SpringerLink (Online service)
- DOI
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10.1038/s41598-019-46986-z
- URN
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urn:nbn:de:101:1-2019110612370869735671
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:28 MESZ
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Beteiligte
- Nguyen, Hieu T.
- Li, Zhuofeng
- Han, Young-Joon
- Basnet, Rabin
- Tebyetekerwa, Mike
- Truong, Thien N.
- Wu, Huiting
- Yan, Di
- Macdonald, Daniel
- SpringerLink (Online service)
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