Contactless, nondestructive determination of dopant profiles of localized boron-diffused regions in silicon wafers at room temperature

Location
Deutsche Nationalbibliothek Frankfurt am Main
ISSN
2045-2322
Extent
Online-Ressource
Language
Englisch
Notes
online resource.

Bibliographic citation
Contactless, nondestructive determination of dopant profiles of localized boron-diffused regions in silicon wafers at room temperature ; volume:9 ; number:1 ; day:18 ; month:7 ; year:2019 ; pages:1-8 ; date:12.2019
Scientific reports ; 9, Heft 1 (18.7.2019), 1-8, 12.2019

Creator
Nguyen, Hieu T.
Li, Zhuofeng
Han, Young-Joon
Basnet, Rabin
Tebyetekerwa, Mike
Truong, Thien N.
Wu, Huiting
Yan, Di
Macdonald, Daniel
Contributor
SpringerLink (Online service)

DOI
10.1038/s41598-019-46986-z
URN
urn:nbn:de:101:1-2019110612370869735671
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
15.08.2025, 7:28 AM CEST

Data provider

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Associated

  • Nguyen, Hieu T.
  • Li, Zhuofeng
  • Han, Young-Joon
  • Basnet, Rabin
  • Tebyetekerwa, Mike
  • Truong, Thien N.
  • Wu, Huiting
  • Yan, Di
  • Macdonald, Daniel
  • SpringerLink (Online service)

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