Radiative Recombination and Carrier Injection Efficiencies in 265 nm Deep Ultraviolet Light‐Emitting Diodes Grown on AlN/Sapphire Templates with Different Defect Densities
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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In: physica status solidi (a) (220:16) - New York, NY : Wiley - Art.-Id. 2200458 - S. -
- Classification
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Elektrotechnik, Elektronik
- Event
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Veröffentlichung
- (where)
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Berlin
- (who)
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Technische Universität Berlin
- (when)
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2023
- Creator
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Muhin, Anton
Guttmann, Martin
Montag, Verena
Susilo, Norman
Ziffer, Eviathar
Sulmoni, Luca
Hagedorn, Sylvia
Lobo Ploch, Neysha
Rass, Jens
Cancellara, Leonardo
Wu, Shaojun
Wernicke, Tim
Kneissl, Michael
- DOI
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10.14279/depositonce-19077
- Handle
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11303/20279
- URN
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urn:nbn:de:101:1-2023111501005449097917
- Rights
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Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 10:00 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Muhin, Anton
- Guttmann, Martin
- Montag, Verena
- Susilo, Norman
- Ziffer, Eviathar
- Sulmoni, Luca
- Hagedorn, Sylvia
- Lobo Ploch, Neysha
- Rass, Jens
- Cancellara, Leonardo
- Wu, Shaojun
- Wernicke, Tim
- Kneissl, Michael
- Technische Universität Berlin
Time of origin
- 2023
Other Objects (12)
Radiative Recombination and Carrier Injection Efficiencies in 265 nm Deep Ultraviolet Light‐Emitting Diodes Grown on AlN/Sapphire Templates with Different Defect Densities
Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light‐Emitting Diodes
Optimizing GaN (11 2 ‾ 2) hetero‐epitaxial templates grown on (10 1 ‾ 0) sapphire
Overgrowth and strain investigation of (11–20) non-polar GaN on patterned templates on sapphire
Plate III. Sapphire
Sapphire pushes ahead
Low‐Refractive Index Layers in Organic Light‐Emitting Diodes via Electrospray Deposition for Enhanced Outcoupling Efficiencies
Electronic states of deep trap levels in a-plane GaN templates grown on r-plane sapphire by HVPE
Sapphire : Herzblatt für Mitwisserinnen
Sapphire : Herzblatt für Mitwisserinnen
Densities, spectral densities and modality
Densities, Spectral Densities and Modality
Radiative Recombination and Carrier Injection Efficiencies in 265 nm Deep Ultraviolet Light‐Emitting Diodes Grown on AlN/Sapphire Templates with Different Defect Densities
Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light‐Emitting Diodes
Optimizing GaN (11 2 ‾ 2) hetero‐epitaxial templates grown on (10 1 ‾ 0) sapphire
Overgrowth and strain investigation of (11–20) non-polar GaN on patterned templates on sapphire
Plate III. Sapphire
Sapphire pushes ahead
Low‐Refractive Index Layers in Organic Light‐Emitting Diodes via Electrospray Deposition for Enhanced Outcoupling Efficiencies
Electronic states of deep trap levels in a-plane GaN templates grown on r-plane sapphire by HVPE
Sapphire : Herzblatt für Mitwisserinnen
Sapphire : Herzblatt für Mitwisserinnen
Densities, spectral densities and modality
Densities, Spectral Densities and Modality
Radiative Recombination and Carrier Injection Efficiencies in 265 nm Deep Ultraviolet Light‐Emitting Diodes Grown on AlN/Sapphire Templates with Different Defect Densities
Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light‐Emitting Diodes
Optimizing GaN (11 2 ‾ 2) hetero‐epitaxial templates grown on (10 1 ‾ 0) sapphire
Overgrowth and strain investigation of (11–20) non-polar GaN on patterned templates on sapphire
Plate III. Sapphire
Sapphire pushes ahead
Low‐Refractive Index Layers in Organic Light‐Emitting Diodes via Electrospray Deposition for Enhanced Outcoupling Efficiencies
Electronic states of deep trap levels in a-plane GaN templates grown on r-plane sapphire by HVPE
Sapphire : Herzblatt für Mitwisserinnen
Sapphire : Herzblatt für Mitwisserinnen
Densities, spectral densities and modality