Radiative Recombination and Carrier Injection Efficiencies in 265 nm Deep Ultraviolet Light‐Emitting Diodes Grown on AlN/Sapphire Templates with Different Defect Densities
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Erschienen in
-
In: physica status solidi (a) (220:16) - New York, NY : Wiley - Art.-Id. 2200458 - S. -
- Klassifikation
-
Elektrotechnik, Elektronik
- Ereignis
-
Veröffentlichung
- (wo)
-
Berlin
- (wer)
-
Technische Universität Berlin
- (wann)
-
2023
- Urheber
-
Muhin, Anton
Guttmann, Martin
Montag, Verena
Susilo, Norman
Ziffer, Eviathar
Sulmoni, Luca
Hagedorn, Sylvia
Lobo Ploch, Neysha
Rass, Jens
Cancellara, Leonardo
Wu, Shaojun
Wernicke, Tim
Kneissl, Michael
- DOI
-
10.14279/depositonce-19077
- Handle
-
11303/20279
- URN
-
urn:nbn:de:101:1-2023111501005449097917
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
14.08.2025, 11:00 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Muhin, Anton
- Guttmann, Martin
- Montag, Verena
- Susilo, Norman
- Ziffer, Eviathar
- Sulmoni, Luca
- Hagedorn, Sylvia
- Lobo Ploch, Neysha
- Rass, Jens
- Cancellara, Leonardo
- Wu, Shaojun
- Wernicke, Tim
- Kneissl, Michael
- Technische Universität Berlin
Entstanden
- 2023
Ähnliche Objekte (12)
Radiative Recombination and Carrier Injection Efficiencies in 265 nm Deep Ultraviolet Light‐Emitting Diodes Grown on AlN/Sapphire Templates with Different Defect Densities
Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light‐Emitting Diodes
Optimizing GaN (11 2 ‾ 2) hetero‐epitaxial templates grown on (10 1 ‾ 0) sapphire
Overgrowth and strain investigation of (11–20) non-polar GaN on patterned templates on sapphire
Sapphire pushes ahead
Plate III. Sapphire
Low‐Refractive Index Layers in Organic Light‐Emitting Diodes via Electrospray Deposition for Enhanced Outcoupling Efficiencies
Electronic states of deep trap levels in a-plane GaN templates grown on r-plane sapphire by HVPE
Sapphire : Herzblatt für Mitwisserinnen
Sapphire : Herzblatt für Mitwisserinnen
Densities, spectral densities and modality
Densities, Spectral Densities and Modality
Radiative Recombination and Carrier Injection Efficiencies in 265 nm Deep Ultraviolet Light‐Emitting Diodes Grown on AlN/Sapphire Templates with Different Defect Densities
Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light‐Emitting Diodes
Optimizing GaN (11 2 ‾ 2) hetero‐epitaxial templates grown on (10 1 ‾ 0) sapphire
Overgrowth and strain investigation of (11–20) non-polar GaN on patterned templates on sapphire
Sapphire pushes ahead
Plate III. Sapphire
Low‐Refractive Index Layers in Organic Light‐Emitting Diodes via Electrospray Deposition for Enhanced Outcoupling Efficiencies
Electronic states of deep trap levels in a-plane GaN templates grown on r-plane sapphire by HVPE
Sapphire : Herzblatt für Mitwisserinnen
Sapphire : Herzblatt für Mitwisserinnen
Densities, spectral densities and modality
Densities, Spectral Densities and Modality
Radiative Recombination and Carrier Injection Efficiencies in 265 nm Deep Ultraviolet Light‐Emitting Diodes Grown on AlN/Sapphire Templates with Different Defect Densities
Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light‐Emitting Diodes
Optimizing GaN (11 2 ‾ 2) hetero‐epitaxial templates grown on (10 1 ‾ 0) sapphire
Overgrowth and strain investigation of (11–20) non-polar GaN on patterned templates on sapphire
Sapphire pushes ahead
Plate III. Sapphire
Low‐Refractive Index Layers in Organic Light‐Emitting Diodes via Electrospray Deposition for Enhanced Outcoupling Efficiencies
Electronic states of deep trap levels in a-plane GaN templates grown on r-plane sapphire by HVPE
Sapphire : Herzblatt für Mitwisserinnen
Sapphire : Herzblatt für Mitwisserinnen
Densities, spectral densities and modality