Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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In: 10.1063/1.5141905
- Ereignis
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Veröffentlichung
- (wo)
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Aachen
- (wer)
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Universitätsbibliothek der RWTH Aachen
- (wann)
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2020
- Urheber
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Besendörfer, S.
Meissner, E.
Zweipfennig, T.
Yacoub, Hady
Fahle, D.
Behmenburg, H.
Kalisch, H.
Vescan, Andrei
Friedrich, J.
Erlbacher, T.
- DOI
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10.18154/RWTH-2020-04280
- URN
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urn:nbn:de:101:1-2021032316505685721925
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:26 MESZ
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Beteiligte
- Besendörfer, S.
- Meissner, E.
- Zweipfennig, T.
- Yacoub, Hady
- Fahle, D.
- Behmenburg, H.
- Kalisch, H.
- Vescan, Andrei
- Friedrich, J.
- Erlbacher, T.
- Universitätsbibliothek der RWTH Aachen
Entstanden
- 2020
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