Metal–Semiconductor Field‐Effect Transistors Based on the Amorphous Multi‐Anion Compound ZnON
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Metal–Semiconductor Field‐Effect Transistors Based on the Amorphous Multi‐Anion Compound ZnON ; volume:6 ; number:4 ; year:2020 ; extent:5
Advanced electronic materials ; 6, Heft 4 (2020) (gesamt 5)
- Creator
- DOI
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10.1002/aelm.201901066
- URN
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urn:nbn:de:101:1-2022070612040226572760
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:30 AM CEST
Data provider
This object is provided by:
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Reinhardt, Anna
- von Wenckstern, Holger
- Grundmann, Marius
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