Influence of the semiconductor oxidation potential on the operational stability of organic field-effect transistors
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Bibliographic citation
-
In: Applied Physics Letters, 99, 10, S. 103302-
- Classification
-
Elektrotechnik, Elektronik
- Event
-
Veröffentlichung
- (where)
-
Augsburg
- (who)
-
Universität Augsburg
- (when)
-
2011
- Event
-
Veröffentlichung
- (where)
-
Melville, NY
- (who)
-
AIP Publishing
- (when)
-
2011
- Creator
- DOI
-
10.1063/1.3634066
- URN
-
urn:nbn:de:bvb:384-opus4-1038488
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:34 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Sharma, Abhinav
- Mathijssen, S. G. J.
- Bobbert, P. A.
- de Leeuw, D. M.
- Universität Augsburg
- AIP Publishing
Time of origin
- 2011
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Proton migration mechanism for the instability of organic field-effect transistors
Hybrid superconductor-semiconductor systems for quantum technology
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Self-Aligned Organic Metal–Semiconductor Field-Effect Transistor
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Tensor categories of Coxeter type B and QFT on the half plane
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Anomalous current transients in organic field-effect transistors
Proton migration mechanism for the instability of organic field-effect transistors
Hybrid superconductor-semiconductor systems for quantum technology
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Operational stability of organic field-effect transistors
High-mobility copper-phthalocyanine field-effect transistors with tetratetracontane passivation layer and organic metal contacts
Self-Aligned Organic Metal–Semiconductor Field-Effect Transistor
ZnO-based metal-semiconductor field-effect transistors
Tensor categories of Coxeter type B and QFT on the half plane
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