Ultra compact electrochemical metallization cells offering reproducible atomic scale memristive switching

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Location: Deutsche Nationalbibliothek Frankfurt am Main

ISSN: 2399-3650

Extent: Online-Ressource

Language: Englisch

Notes: online resource.

Bibliographic citation: Ultra compact electrochemical metallization cells offering reproducible atomic scale memristive switching ; volume:2 ; number:1 ; day:7 ; month:3 ; year:2019 ; pages:1-9 ; date:12.2019
Communications Physics ; 2, Heft 1 (7.3.2019), 1-9, 12.2019

Creator: Cheng, Bojun
Emboras, Alexandros
Salamin, Yannick
Ducry, Fabian
Ma, Ping
Fedoryshyn, Yuriy
Andermatt, Samuel
Luisier, Mathieu
Leuthold, Juerg

Contributor: SpringerLink (Online service)

DOI: 10.1038/s42005-019-0125-9

URN: urn:nbn:de:101:1-2019040123013224377068

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 14.08.2025, 11:03 AM CEST

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Associated

Cheng, Bojun
Emboras, Alexandros
Salamin, Yannick
Ducry, Fabian
Ma, Ping
Fedoryshyn, Yuriy
Andermatt, Samuel
Luisier, Mathieu
Leuthold, Juerg
SpringerLink (Online service)

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Ultra compact electrochemical metallization cells offering reproducible atomic scale memristive switching

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Other Objects (12)

Aromaticity‐Dependent Memristive Switching

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Memristive tonotopic mapping with volatile resistive switching memory devices

Area-dependent resistive switching in PCMO-based memristive devices

Memristive devices based on mass printed organic resistive switching layers

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Electrochemical Metallization Memristive Devices with Al Active Electrode Using Engineered Mixed Hexagonal/Orthorhombic Polycrystalline YMnO 3

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Memristive tonotopic mapping with volatile resistive switching memory devices

Area-dependent resistive switching in PCMO-based memristive devices

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Area-dependent resistive switching in PCMO-based memristive devices

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