A DLTS analysis of alpha particle irradiated commercial 4H-SiC Schottky barrier diodes

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
1 Online-Ressource.
Language
Englisch

Bibliographic citation
A DLTS analysis of alpha particle irradiated commercial 4H-SiC Schottky barrier diodes ; volume:35 ; number:27 ; day:25 ; month:9 ; year:2024 ; pages:1-12 ; date:9.2024
Journal of materials science / Materials in electronics ; 35, Heft 27 (25.9.2024), 1-12, 9.2024

Creator
Ahmed, Mustafa A. M.
Auret, F. D.
Nel, J. M.
Venter, Andrè
Contributor
SpringerLink (Online service)

DOI
10.1007/s10854-024-13507-2
URN
urn:nbn:de:101:1-2412242100376.502418935441
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
15.08.2025, 7:32 AM CEST

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Associated

  • Ahmed, Mustafa A. M.
  • Auret, F. D.
  • Nel, J. M.
  • Venter, Andrè
  • SpringerLink (Online service)

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