Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics

Location
Deutsche Nationalbibliothek Frankfurt am Main
ISSN
1556-276X
Extent
Online-Ressource
Language
Englisch
Notes
online resource.

Bibliographic citation
Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics ; volume:6 ; number:1 ; day:28 ; month:9 ; year:2010 ; pages:1-4 ; date:12.2011
Nanoscale research letters ; 6, Heft 1 (28.9.2010), 1-4, 12.2011

Creator
Park, Byoungjun
Cho, Kyoungah
Kim, Sungsu
Kim, Sangsig
Contributor
SpringerLink (Online service)

DOI
10.1007/s11671-010-9789-5
URN
urn:nbn:de:101:1-2021081500430529988506
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
14.08.2025, 10:47 AM CEST

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Associated

  • Park, Byoungjun
  • Cho, Kyoungah
  • Kim, Sungsu
  • Kim, Sangsig
  • SpringerLink (Online service)

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