Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1556-276X
- Umfang
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Online-Ressource
- Sprache
-
Englisch
- Anmerkungen
-
online resource.
- Erschienen in
-
Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics ; volume:6 ; number:1 ; day:28 ; month:9 ; year:2010 ; pages:1-4 ; date:12.2011
Nanoscale research letters ; 6, Heft 1 (28.9.2010), 1-4, 12.2011
- Urheber
-
Park, Byoungjun
Cho, Kyoungah
Kim, Sungsu
Kim, Sangsig
- Beteiligte Personen und Organisationen
-
SpringerLink (Online service)
- DOI
-
10.1007/s11671-010-9789-5
- URN
-
urn:nbn:de:101:1-2021081500430529988506
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
14.08.2025, 10:47 MESZ
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Beteiligte
- Park, Byoungjun
- Cho, Kyoungah
- Kim, Sungsu
- Kim, Sangsig
- SpringerLink (Online service)
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