Analog Synaptic Devices Based on IGZO Thin‐Film Transistors with a Metal–Ferroelectric–Metal–Insulator–Semiconductor Structure for High‐Performance Neuromorphic Systems
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Bibliographic citation
-
Analog Synaptic Devices Based on IGZO Thin‐Film Transistors with a Metal–Ferroelectric–Metal–Insulator–Semiconductor Structure for High‐Performance Neuromorphic Systems ; day:28 ; month:09 ; year:2023 ; extent:8
Advanced intelligent systems ; (28.09.2023) (gesamt 8)
- Creator
-
Kwon, Dongseok
Park, Eun Chan
Shin, Wonjun
Koo, Ryun-Han
Hwang, Joon
Bae, Jong-Ho
Kwon, Daewoong
Lee, Jong-Ho
- DOI
-
10.1002/aisy.202300125
- URN
-
urn:nbn:de:101:1-2023092915101151247542
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
14.08.2025, 10:50 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Kwon, Dongseok
- Park, Eun Chan
- Shin, Wonjun
- Koo, Ryun-Han
- Hwang, Joon
- Bae, Jong-Ho
- Kwon, Daewoong
- Lee, Jong-Ho
Other Objects (12)
Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures
Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures
Modulation of VO 2 Metal–Insulator Transition by Ferroelectric HfO 2 Gate Insulator
Transport properties of metal-metal and metal-insulator heterostructures
The Mott metal insulator transition
Electrical investigations on praseodymium oxide aluminum oxynitride containing metal insulator semiconductor stacks and on metal ferroelectric insulator semiconductor structures consisting of poly(vinylidene fluoride trifluoroethylene)
Superconductivity at metal-antiferromagnetic insulator interfaces
Novel Stacking Design of a Flexible Thin‐Film Thermoelectric Generator with a Metal–Insulator–Semiconductor Architecture
Optical‐Field‐Driven Electron Tunneling in Metal–Insulator–Metal Nanojunction
Tunable metal-insulator transition, Rashba effect and Weyl Fermions in a relativistic charge-ordered ferroelectric oxide
Insulator-assisted regular arrays of metal centres via metal-organic compounds
Significant Unconventional Anomalous Hall Effect in Heavy Metal/Antiferromagnetic Insulator Heterostructures
Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures
Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures
Modulation of VO 2 Metal–Insulator Transition by Ferroelectric HfO 2 Gate Insulator
Transport properties of metal-metal and metal-insulator heterostructures
The Mott metal insulator transition
Electrical investigations on praseodymium oxide aluminum oxynitride containing metal insulator semiconductor stacks and on metal ferroelectric insulator semiconductor structures consisting of poly(vinylidene fluoride trifluoroethylene)
Superconductivity at metal-antiferromagnetic insulator interfaces
Novel Stacking Design of a Flexible Thin‐Film Thermoelectric Generator with a Metal–Insulator–Semiconductor Architecture
Optical‐Field‐Driven Electron Tunneling in Metal–Insulator–Metal Nanojunction
Tunable metal-insulator transition, Rashba effect and Weyl Fermions in a relativistic charge-ordered ferroelectric oxide
Insulator-assisted regular arrays of metal centres via metal-organic compounds
Significant Unconventional Anomalous Hall Effect in Heavy Metal/Antiferromagnetic Insulator Heterostructures
Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures
Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures
Modulation of VO 2 Metal–Insulator Transition by Ferroelectric HfO 2 Gate Insulator
Transport properties of metal-metal and metal-insulator heterostructures
The Mott metal insulator transition
Electrical investigations on praseodymium oxide aluminum oxynitride containing metal insulator semiconductor stacks and on metal ferroelectric insulator semiconductor structures consisting of poly(vinylidene fluoride trifluoroethylene)
Superconductivity at metal-antiferromagnetic insulator interfaces
Novel Stacking Design of a Flexible Thin‐Film Thermoelectric Generator with a Metal–Insulator–Semiconductor Architecture
Optical‐Field‐Driven Electron Tunneling in Metal–Insulator–Metal Nanojunction
Tunable metal-insulator transition, Rashba effect and Weyl Fermions in a relativistic charge-ordered ferroelectric oxide
Insulator-assisted regular arrays of metal centres via metal-organic compounds