Modulation of VO 2 Metal–Insulator Transition by Ferroelectric HfO 2 Gate Insulator
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Modulation of VO 2 Metal–Insulator Transition by Ferroelectric HfO 2 Gate Insulator ; volume:6 ; number:5 ; year:2020 ; extent:5
Advanced electronic materials ; 6, Heft 5 (2020) (gesamt 5)
- Urheber
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Yajima, Takeaki
Nishimura, Tomonori
Tanaka, Takahisa
Uchida, Ken
Toriumi, Akira
- DOI
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10.1002/aelm.201901356
- URN
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urn:nbn:de:101:1-2022062410570383337706
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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15.08.2025, 07:39 MESZ
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Beteiligte
- Yajima, Takeaki
- Nishimura, Tomonori
- Tanaka, Takahisa
- Uchida, Ken
- Toriumi, Akira
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