Precursor region with full phonon softening above the charge-density-wave phase transition in 2H-TaSe2

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: 1 Online-Ressource.

Language: Englisch

Bibliographic citation: Precursor region with full phonon softening above the charge-density-wave phase transition in 2H-TaSe2 ; volume:14 ; number:1 ; day:10 ; month:11 ; year:2023 ; pages:1-10 ; date:12.2023
Nature Communications ; 14, Heft 1 (10.11.2023), 1-10, 12.2023

Creator: Shen, Xingchen
Heid, Rolf
Hott, Roland
Haghighirad, Amir-Abbas
Salzmann, Björn
Reis Cantarino, Marli dos
Monney, Claude
Said, Ayman H.
Frachet, Mehdi
Murphy, Bridget
Rossnagel, Kai
Rosenkranz, Stephan
Weber, Frank

Contributor: SpringerLink (Online service)

DOI: 10.1038/s41467-023-43094-5

URN: urn:nbn:de:101:1-2024012915080757979454

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:24 AM CEST

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Associated

Shen, Xingchen
Heid, Rolf
Hott, Roland
Haghighirad, Amir-Abbas
Salzmann, Björn
Reis Cantarino, Marli dos
Monney, Claude
Said, Ayman H.
Frachet, Mehdi
Murphy, Bridget
Rossnagel, Kai
Rosenkranz, Stephan
Weber, Frank
SpringerLink (Online service)

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Precursor region with full phonon softening above the charge-density-wave phase transition in 2H-TaSe2

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Other Objects (12)

Confinement-Induced Phonon Softening and Hardening in Sb2Te3 Thin Films

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Softening of a flat phonon mode in the kagome ScV6Sn6

Elektronische Struktur und Peierls-Instabilität in 2H-NbSe2

Confinement‐Induced Phonon Softening and Hardening in Sb 2 Te 3 Thin Films

Tilted vortex cores and superconducting gap anisotropy in 2H-NbSe2

Exciton–phonon coupling strength in single-layer MoSe2 at room temperature

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Elektronische Struktur und Peierls-Instabilität in 2H-NbSe2

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Satellite phonon absorption lines above the 875 GHz resonance of interstitial oxygen in silicon

Charge density waves and the effects of uniaxial strain on the electronic structure of 2H-NbSe2

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