- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISBN
-
9783844010091
- Maße
-
21 cm, 254 g
- Umfang
-
V, 160 S.
- Sprache
-
Englisch
- Anmerkungen
-
graph. Darst.
Zugl.: München, Techn. Univ., Diss., 2012
- Erschienen in
-
Selected topics of electronics and micromechatronics ; Vol. 43
- Klassifikation
-
Elektrotechnik, Elektronik
- Schlagwort
-
Statisches RAM
Speicherzelle
MOS-FET
Degradation
Zuverlässigkeit
Flip-Flop
CMOS
Nanometerbereich
- Ereignis
-
Veröffentlichung
- (wo)
-
Aachen
- (wer)
-
Shaker
- (wann)
-
2012
- Urheber
-
Drapatz, Stefan
- Inhaltsverzeichnis
- Rechteinformation
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Letzte Aktualisierung
-
11.06.2025, 13:46 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
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Objekttyp
- Hochschulschrift
Beteiligte
- Drapatz, Stefan
- Shaker
Entstanden
- 2012
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