- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Bibliographic citation
-
In: Journal de physique, Lettres 40 (1979), S. L53-L55
- Classification
-
Physik
- Keyword
-
Ultraschallspektroskopie ; Silicium
- Event
-
Veröffentlichung
- (where)
-
Stuttgart
- (who)
-
Universitätsbibliothek der Universität Stuttgart
- (when)
-
2009
- Creator
- URN
-
urn:nbn:de:bsz:93-opus-46873
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
25.03.2025, 1:51 PM CET
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Zeile, Heinrich
- Mathuni, Otto
- Lassmann, Kurt
- Universitätsbibliothek der Universität Stuttgart
Time of origin
- 2009
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Ultrasonic attenuation due to the neutral acceptor indium in silicon
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Statistical mechanics, deformation, ultrasonic spectroscopy : with 7 tables
Optical spectroscopy on silicon vacancy defects in silicon carbide
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Ultrasonic attenuation due to the neutral acceptor indium in silicon
Microscopic photoluminescence spectroscopy on silicon
Ultrasonic Spectroscopy to Characterize Flaws, Porosity and Adhesive Bonds
Ultrasonic spectroscopy of the acceptor ground state in cubic semiconductors
UV Raman spectroscopy of segregated carbon in silicon oxycarbides
Ultrasonic encephalography
Spectroscopy of A-type-stars
Silicon interface passivation studied by modulated surface photovoltage spectroscopy
Mikromechanische Ultraschallwandler aus Silizium : = Silicon micromachined ultrasonic transducers
Statistical mechanics, deformation, ultrasonic spectroscopy : with 7 tables
Optical spectroscopy on silicon vacancy defects in silicon carbide
Optical spectroscopy on silicon vacancy defects in silicon carbide
Ultrasonic attenuation due to the neutral acceptor indium in silicon
Microscopic photoluminescence spectroscopy on silicon
Ultrasonic Spectroscopy to Characterize Flaws, Porosity and Adhesive Bonds
Ultrasonic spectroscopy of the acceptor ground state in cubic semiconductors
UV Raman spectroscopy of segregated carbon in silicon oxycarbides
Ultrasonic encephalography
Spectroscopy of A-type-stars