Hochschulschrift
CVD growth of (001) and (111) 3C-SiC epilayers and their interface reactivity with praseodymium oxide dielectric layers
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Notes
-
Cottbus, Univ., Diss., 2006
- Keyword
-
Siliciumcarbid ; Kristallfläche ; Dielektrische Schicht ; CVD-Verfahren
- Creator
- URN
-
urn:nbn:de:kobv:co1-opus-121
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
14.08.2025, 10:52 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Object type
- Hochschulschrift
Associated
Other Objects (12)
Interface-phenomena in 3C-SiC heteroepitaxy on silicon
Organic CMOS technology by dielectric interface engineering
Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates
3.C.
Interface Probing by Dielectric Frequency Dispersion in Carbon Nanocomposites
Reactivity of Nickel (II) Porphyrins in oCVD Processes—Polymerisation, Intramolecular Cyclisation and Chlorination
Total OH reactivity measurements at the biosphere-atmosphere interface
Total OH reactivity measurements at the biosphere-atmosphere interface
3cS
Kapitell 3c
Bd. 3c
Paradiesstraße 3c
Interface-phenomena in 3C-SiC heteroepitaxy on silicon
Organic CMOS technology by dielectric interface engineering
Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates
3.C.
Interface Probing by Dielectric Frequency Dispersion in Carbon Nanocomposites
Reactivity of Nickel (II) Porphyrins in oCVD Processes—Polymerisation, Intramolecular Cyclisation and Chlorination
Total OH reactivity measurements at the biosphere-atmosphere interface
Total OH reactivity measurements at the biosphere-atmosphere interface
3cS
Kapitell 3c
Bd. 3c
Paradiesstraße 3c
Interface-phenomena in 3C-SiC heteroepitaxy on silicon
Organic CMOS technology by dielectric interface engineering
Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates
3.C.
Interface Probing by Dielectric Frequency Dispersion in Carbon Nanocomposites
Reactivity of Nickel (II) Porphyrins in oCVD Processes—Polymerisation, Intramolecular Cyclisation and Chlorination
Total OH reactivity measurements at the biosphere-atmosphere interface
Total OH reactivity measurements at the biosphere-atmosphere interface
3cS
Kapitell 3c
Bd. 3c