Analogue Artificial Synaptic Performance of Self‐Rectifying Resistive Switching Device (Adv. Electron. Mater. 8/2023)
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Analogue Artificial Synaptic Performance of Self‐Rectifying Resistive Switching Device (Adv. Electron. Mater. 8/2023) ; volume:9 ; number:8 ; year:2023 ; extent:1
Advanced electronic materials ; 9, Heft 8 (2023) (gesamt 1)
- Creator
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Seo, Hyun Kyu
Ryu, Jin Joo
Lee, Su Yeon
Jeon, Kanghyoek
Sohn, Hyunchul
Kim, Gun Hwan
Yang, Min Kyu
- DOI
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10.1002/aelm.202370038
- URN
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urn:nbn:de:101:1-2023081115061727731627
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 10:57 AM CEST
Data provider
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Seo, Hyun Kyu
- Ryu, Jin Joo
- Lee, Su Yeon
- Jeon, Kanghyoek
- Sohn, Hyunchul
- Kim, Gun Hwan
- Yang, Min Kyu
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Percolation Threshold Enables Optical Resistive‐Memory Switching and Light‐Tuneable Synaptic Learning in Segregated Nanocomposites
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Germanium sulphide based resistive switching devices
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