Controllable Resistive Switching in ReS 2/WS 2 Heterostructure for Nonvolatile Memory and Synaptic Simulation

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
Online-Ressource
Language
Englisch

Bibliographic citation
Controllable Resistive Switching in ReS 2/WS 2 Heterostructure for Nonvolatile Memory and Synaptic Simulation ; day:02 ; month:08 ; year:2023 ; extent:10
Advanced science ; (02.08.2023) (gesamt 10)

Creator
Huang, Feihong
Ke, Congming
Li, Jinan
Chen, Li
Yin, Jun
Li, Xu
Wu, Zhiming
Zhang, Chunmiao
Xu, Feiya
Wu, Yaping
Kang, Junyong

DOI
10.1002/advs.202302813
URN
urn:nbn:de:101:1-2023080215211550958499
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
14.08.2025, 10:51 AM CEST

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Associated

  • Huang, Feihong
  • Ke, Congming
  • Li, Jinan
  • Chen, Li
  • Yin, Jun
  • Li, Xu
  • Wu, Zhiming
  • Zhang, Chunmiao
  • Xu, Feiya
  • Wu, Yaping
  • Kang, Junyong

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