Transient numerical simulation of sublimation growth of SiC bulk single crystals : modeling ; finite volume method ; results
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Dimensions
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30 cm
- Extent
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XV, 289 S.
- Language
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Englisch
- Notes
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Ill., graph. Darst.
Literaturverz. S. 249 - 256
- Bibliographic citation
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Report / Weierstraß-Institut für Angewandte Analysis und Stochastik ; No. 22
- Table of contents
- Rights
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Last update
-
11.06.2025, 1:44 PM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Philip, Peter
- WIAS
Time of origin
- 2003
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