Transient numerical simulation of sublimation growth of SiC bulk single crystals : modeling ; finite volume method ; results
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Maße
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30 cm
- Umfang
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XV, 289 S.
- Sprache
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Englisch
- Anmerkungen
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Ill., graph. Darst.
Literaturverz. S. 249 - 256
- Erschienen in
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Report / Weierstraß-Institut für Angewandte Analysis und Stochastik ; No. 22
- Inhaltsverzeichnis
- Rechteinformation
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Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Letzte Aktualisierung
-
11.06.2025, 13:44 MESZ
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Beteiligte
- Philip, Peter
- WIAS
Entstanden
- 2003
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