Electron beam irradiation induced crystallization behavior of amorphous Ge2Sb2Te5 chalcogenide material

Location
Deutsche Nationalbibliothek Frankfurt am Main
ISSN
2287-4445
Extent
Online-Ressource
Language
Englisch
Notes
online resource.

Bibliographic citation
Electron beam irradiation induced crystallization behavior of amorphous Ge2Sb2Te5 chalcogenide material ; volume:49 ; number:1 ; day:17 ; month:12 ; year:2019 ; pages:1-2 ; date:12.2019
Applied microscopy ; 49, Heft 1 (17.12.2019), 1-2, 12.2019

Creator
An, Byeong-Seon
Contributor
SpringerLink (Online service)

DOI
10.1186/s42649-019-0021-5
URN
urn:nbn:de:101:1-2020040720490763517112
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
14.08.2025, 10:45 AM CEST

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Associated

  • An, Byeong-Seon
  • SpringerLink (Online service)

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