Electron beam irradiation induced crystallization behavior of amorphous Ge2Sb2Te5 chalcogenide material
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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2287-4445
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Anmerkungen
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online resource.
- Erschienen in
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Electron beam irradiation induced crystallization behavior of amorphous Ge2Sb2Te5 chalcogenide material ; volume:49 ; number:1 ; day:17 ; month:12 ; year:2019 ; pages:1-2 ; date:12.2019
Applied microscopy ; 49, Heft 1 (17.12.2019), 1-2, 12.2019
- Urheber
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An, Byeong-Seon
- Beteiligte Personen und Organisationen
-
SpringerLink (Online service)
- DOI
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10.1186/s42649-019-0021-5
- URN
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urn:nbn:de:101:1-2020040720490763517112
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
14.08.2025, 10:45 MESZ
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Beteiligte
- An, Byeong-Seon
- SpringerLink (Online service)
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