Investigations on the Recombination Activity of Grain Boundaries in mc Silicon
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Anmerkungen
-
In: 2008 33rd IEEE Photovolatic Specialists Conference. - IEEE, 2008. - S. 1-5. - ISSN 0160-8371. - ISBN 978-1-4244-1640-0
In: 2008 33rd IEEE Photovolatic Specialists Conference (PVSC), 11. Mai 2008 - 16. Mai 2008, San Diego, CA, USA
- Klassifikation
-
Physik
- Ereignis
-
Veröffentlichung
- (wo)
-
Konstanz
- (wer)
-
Bibliothek der Universität Konstanz
- (wann)
-
2008
- Urheber
-
Zuschlag, Annika
Micard, Gabriel
Junge, Johannes
Kaes, Martin
Seren, Sven
Hahn, Giso
Coletti, Gianluca
Jia, Guobin
Seifert, Winfried
- URN
-
urn:nbn:de:bsz:352-opus-122458
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
25.03.2025, 13:44 MEZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Zuschlag, Annika
- Micard, Gabriel
- Junge, Johannes
- Kaes, Martin
- Seren, Sven
- Hahn, Giso
- Coletti, Gianluca
- Jia, Guobin
- Seifert, Winfried
- Bibliothek der Universität Konstanz
Entstanden
- 2008
Ähnliche Objekte (12)
Extraction of the Surface Recombination Velocity and Diffusion Length from LBIC and EBIC Measurements at Grain Boundaries in mc Silicon
Automatic etch pit density analysis in multicrystalline silicon
Boron-oxygen related defects in Cz-silicon solar cells degradation, regeneration and beyond
Temperature induced degradation of the contact resistance of Ag-screen printed p-type silicon solar cells
Status of selective emitter technology
12,5% efficient RGS silicon solar cells with carrier collecting channels
The corrosive effect of alkaline nickel-phosphorus plating on crystalline silicon
Quantitative interpretation of light beam induced current contrast profiles : evaluating the influence of a nearby grain boundary
Stability test on Cz and Tri-Silicon wafers with different surface morphologies
Investigating possible causes of light induced degradation in boron-doped Float-Zone silicon
Texturing of String Ribbon silicon
Bulk passivation in silicon ribbons : a lifetime study for an enhanced high efficiency process
Extraction of the Surface Recombination Velocity and Diffusion Length from LBIC and EBIC Measurements at Grain Boundaries in mc Silicon
Automatic etch pit density analysis in multicrystalline silicon
Boron-oxygen related defects in Cz-silicon solar cells degradation, regeneration and beyond
Temperature induced degradation of the contact resistance of Ag-screen printed p-type silicon solar cells
Status of selective emitter technology
12,5% efficient RGS silicon solar cells with carrier collecting channels
The corrosive effect of alkaline nickel-phosphorus plating on crystalline silicon
Quantitative interpretation of light beam induced current contrast profiles : evaluating the influence of a nearby grain boundary
Stability test on Cz and Tri-Silicon wafers with different surface morphologies
Investigating possible causes of light induced degradation in boron-doped Float-Zone silicon
Texturing of String Ribbon silicon
Bulk passivation in silicon ribbons : a lifetime study for an enhanced high efficiency process
Extraction of the Surface Recombination Velocity and Diffusion Length from LBIC and EBIC Measurements at Grain Boundaries in mc Silicon
Automatic etch pit density analysis in multicrystalline silicon
Boron-oxygen related defects in Cz-silicon solar cells degradation, regeneration and beyond
Temperature induced degradation of the contact resistance of Ag-screen printed p-type silicon solar cells
Status of selective emitter technology
12,5% efficient RGS silicon solar cells with carrier collecting channels
The corrosive effect of alkaline nickel-phosphorus plating on crystalline silicon
Quantitative interpretation of light beam induced current contrast profiles : evaluating the influence of a nearby grain boundary
Stability test on Cz and Tri-Silicon wafers with different surface morphologies
Investigating possible causes of light induced degradation in boron-doped Float-Zone silicon
Texturing of String Ribbon silicon