The Dissociation of Gallium–Hydrogen Pairs in Crystalline Silicon during Illuminated Annealing

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Bibliographic citation: The Dissociation of Gallium–Hydrogen Pairs in Crystalline Silicon during Illuminated Annealing ; day:29 ; month:09 ; year:2022 ; extent:6
Physica status solidi / Rapid research letters. Rapid research letters ; (29.09.2022) (gesamt 6)

Creator: Simon, Jochen
Herguth, Axel
Kutschera, Leah
Hahn, Giso

DOI: 10.1002/pssr.202200297

URN: urn:nbn:de:101:1-2022092915032198162083

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:39 AM CEST

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Simon, Jochen
Herguth, Axel
Kutschera, Leah
Hahn, Giso

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The Dissociation of Gallium–Hydrogen Pairs in Crystalline Silicon during Illuminated Annealing

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Other Objects (12)

The Dissociation of Gallium-Hydrogen Pairs in Crystalline Silicon during Illuminated Annealing

Formation Dynamics of BH and GaH‐Pairs in Crystalline Silicon During Dark Annealing

Elimination of BO-LID in mass production using illuminated annealing in a coupled firing and regeneration tool

Investigation on the Long-Term Stability of AlOx/SiNy:H and SiNy:H Passivation Layers During Illuminated Annealing at Elevated Temperatures

Concepts and Techniques for the Analysis of Defect Reactions in Crystalline Silicon

Finite Element Simulation of the Local Al/Si Contact Formation

Application of the Concept of Lifetime‐Equivalent Defect Density in Defect Systems Comprising a Multitude of Defect Species

Formation Dynamics of BH and GaH‐Pairs in Crystalline Silicon during Dark Annealing

Investigation on the Long-Term Stability of AlO<sub>x</sub>/SiN<sub>y</sub>:H and SiN<sub>y</sub>:H Passivation Layers During Illuminated Annealing at Elevated Temperatures

Towards a high throughput solution for boron-oxygen related regeneration

Kinetics of the boron-oxygen related defect in theory and experiment

Study on Boron–Hydrogen Pairs in Bare and Passivated Float‐Zone Silicon Wafers

The Dissociation of Gallium-Hydrogen Pairs in Crystalline Silicon during Illuminated Annealing

Formation Dynamics of BH and GaH‐Pairs in Crystalline Silicon During Dark Annealing

Elimination of BO-LID in mass production using illuminated annealing in a coupled firing and regeneration tool

Investigation on the Long-Term Stability of AlOx/SiNy:H and SiNy:H Passivation Layers During Illuminated Annealing at Elevated Temperatures

Concepts and Techniques for the Analysis of Defect Reactions in Crystalline Silicon

Finite Element Simulation of the Local Al/Si Contact Formation

Application of the Concept of Lifetime‐Equivalent Defect Density in Defect Systems Comprising a Multitude of Defect Species

Formation Dynamics of BH and GaH‐Pairs in Crystalline Silicon during Dark Annealing

Investigation on the Long-Term Stability of AlO<sub>x</sub>/SiN<sub>y</sub>:H and SiN<sub>y</sub>:H Passivation Layers During Illuminated Annealing at Elevated Temperatures

Towards a high throughput solution for boron-oxygen related regeneration

Kinetics of the boron-oxygen related defect in theory and experiment

Study on Boron–Hydrogen Pairs in Bare and Passivated Float‐Zone Silicon Wafers

The Dissociation of Gallium-Hydrogen Pairs in Crystalline Silicon during Illuminated Annealing

Formation Dynamics of BH and GaH‐Pairs in Crystalline Silicon During Dark Annealing

Elimination of BO-LID in mass production using illuminated annealing in a coupled firing and regeneration tool

Investigation on the Long-Term Stability of AlOx/SiNy:H and SiNy:H Passivation Layers During Illuminated Annealing at Elevated Temperatures

Concepts and Techniques for the Analysis of Defect Reactions in Crystalline Silicon

Finite Element Simulation of the Local Al/Si Contact Formation

Application of the Concept of Lifetime‐Equivalent Defect Density in Defect Systems Comprising a Multitude of Defect Species

Formation Dynamics of BH and GaH‐Pairs in Crystalline Silicon during Dark Annealing

Investigation on the Long-Term Stability of AlO<sub>x</sub>/SiN<sub>y</sub>:H and SiN<sub>y</sub>:H Passivation Layers During Illuminated Annealing at Elevated Temperatures

Towards a high throughput solution for boron-oxygen related regeneration

Kinetics of the boron-oxygen related defect in theory and experiment

Study on Boron–Hydrogen Pairs in Bare and Passivated Float‐Zone Silicon Wafers

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