In-depth electrical characterization of HfO₂-based memristive devices for their integration in CMOS-compatible neuromorphic systems
- Weitere Titel
-
Elektrische Charakterisierung von HfO₂-basierten memristiven Bauelementen zur Integration in CMOS-kompatible neuromorphe Systeme
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Anmerkungen
-
Cottbus, BTU Cottbus - Senftenberg, Dissertation, 2024
- Klassifikation
-
Elektrotechnik, Elektronik
- Schlagwort
-
Neuromorphing
Neuronales Netz
Resistive RAM
- Ereignis
-
Veröffentlichung
- (wo)
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Cottbus
- (wer)
-
BTU Cottbus - Senftenberg
- (wann)
-
2024
- Urheber
-
Perez-Bosch Quesada, Emilio
- Beteiligte Personen und Organisationen
- DOI
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10.26127/BTUOpen-6781
- URN
-
urn:nbn:de:kobv:co1-opus4-67815
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
14.08.2025, 10:54 MESZ
Datenpartner
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Beteiligte
- Perez-Bosch Quesada, Emilio
- Wenger, Christian
- Perez, Eduardo
- BTU Cottbus - Senftenberg
Entstanden
- 2024
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