Improved silicon surface passivation by ALD Al2O3/SiO2 multilayers with In‐Situ plasma treatments
Abstract: Al2O3 is one of the most effective dielectric surface passivation layers for silicon solar cells, but recent studies indicate that there is still room for improvement. Instead of a single layer, multilayers of only a few nanometers thickness offer the possibility to tailor material properties on a nanometer scale. In this study, the effect of various plasma treatments performed at different stages during the ALD deposition of Al2O3/SiO2 multilayers on the silicon surface passivation quality is evaluated. Significant improvements in surface passivation quality for some plasma treatments are observed, particularly for single Al2O3/SiO2 bilayers treated with a H2 plasma after SiO2 deposition. This treatment resulted in a surface recombination parameter J0 as low as 0.35 fA cm−2 on (100) surfaces of 10 Ω cm n-type silicon, more than a factor of 5 lower than that of Al2O3 single layers without plasma treatment. Capacitance-voltage measurements indicate that the improved surface passivation of the plasma-treated samples results from an enhanced chemical interface passivation rather than an improved field effect. In addition, a superior temperature stability of the surface passivation quality is found for various plasma-treated multilayers
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Anmerkungen
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Advanced materials interfaces. - 10, 16 (2023) , 2202469, ISSN: 2196-7350
- Ereignis
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Veröffentlichung
- (wo)
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Freiburg
- (wer)
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Universität
- (wann)
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2023
- Urheber
- DOI
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10.1002/admi.202202469
- URN
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urn:nbn:de:bsz:25-freidok-2377772
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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14.08.2024, 10:45 MESZ
Datenpartner
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Richter, Armin
- Patel, Hemangi
- Reichel, Christian
- Benick, Jan
- Glunz, Stefan
- Universität
Entstanden
- 2023
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