- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISBN
-
9783896495419
3896495410
- Maße
-
21 cm
- Umfang
-
XI, 149 S.
- Sprache
-
Englisch
- Anmerkungen
-
Ill., graph. Darst.
Zugl.: Zürich, Eidgenössische Techn. Hochsch., Diss., 2000
- Erschienen in
-
Series in microelectronics ; Vol. 91
- Schlagwort
-
Heterostruktur
Einelektronen-Tunneleffekt
Transistor
Simulation
- Inhaltsverzeichnis
- Rechteinformation
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Letzte Aktualisierung
-
11.06.2025, 14:26 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Objekttyp
- Hochschulschrift
Beteiligte
- Scholze, Andreas
- Hartung-Gorre
Entstanden
- 2000
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