- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISBN
-
9783896495662
3896495666
- Dimensions
-
21 cm
- Extent
-
XX, 131 S.
- Edition
-
1. Aufl.
- Language
-
Englisch
- Notes
-
graph. Darst.
Zugl.: Zürich, Eidgenössische Techn. Hochsch., Diss., 2000
- Bibliographic citation
-
Series in microelectronics ; Vol. 94
- Keyword
-
MOS-FET
Quanteneffekt
Schrödinger-Gleichung
Drift-Diffusions-Modell
- Table of contents
- Rights
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Last update
-
11.03.2025, 11:46 AM CET
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Object type
- Hochschulschrift
Associated
- Wettstein, Andreas
- Hartung-Gorre
Time of origin
- 2000
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Band structure effects and quantum transport
Scattering in nanoscale devices
Simulation of single electron devices
MOS controlled switches for high voltage application
Technology computer aided design of ESD protection devices
Rigorous simulation of light propagation in semiconductor devices
Theory and design of broadband active optoelectronic devices
Simulation of carrier generation in advanced silicon devices
Grid generation for three-dimensional non-rectangular semiconductor devices
Charge injection in MOS-integrated sample-and-hold and switched-capacitor circuits
MOS controlled power devices for high voltage application
Characterisation of degradation and failure phenomena in MOS devices
Band structure effects and quantum transport
Scattering in nanoscale devices
Simulation of single electron devices
MOS controlled switches for high voltage application
Technology computer aided design of ESD protection devices
Rigorous simulation of light propagation in semiconductor devices
Theory and design of broadband active optoelectronic devices
Simulation of carrier generation in advanced silicon devices
Grid generation for three-dimensional non-rectangular semiconductor devices